Field-Effect Transistors based on Wafer-Scale, Highly Uniform Few-Layer P-type WSe2

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR06180F, Paper

Philip Michael Campbell, Alexey Tarasov, Corey Joiner, Meng-Yen Tsai, Georges Pavlidis, Samuel Graham, William Jud Ready, E Vogel
The synthesis of few-layer tungsten diselenide (WSe₂) via chemical vapor deposition typically results in highly non-uniform thickness due to nucleation initiated growth of triangular domains. In this work, few-layer p-type...
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