Nanoscale , 2015, Advance Article
DOI: 10.1039/C5NR01361E, Paper
DOI: 10.1039/C5NR01361E, Paper
Sijung Yoo, Taeyong Eom, Taehong Gwon, Cheol Seong Hwang
The mechanism of bipolar resistive switching (BRS) of amorphous Ge2 Sb2 Te5 (GST) thin films sandwiched between inert electrodes (Ti and Pt) was examined.
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The mechanism of bipolar resistive switching (BRS) of amorphous Ge2 Sb2 Te5 (GST) thin films sandwiched between inert electrodes (Ti and Pt) was examined.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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