Nanoscale , 2015, Advance Article
DOI: 10.1039/C5NR00181A, Paper
DOI: 10.1039/C5NR00181A, Paper
Jianbiao Lu, Ruiqiang Guo, Weijing Dai, Baoling Huang
P-Type polycrystalline silicon-germanium thin films are grown by low-pressure chemical vapor deposition and their thermoelectric properties are characterized from 120 K to 300 K for potential application in integrated microscale cooling.
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P-Type polycrystalline silicon-germanium thin films are grown by low-pressure chemical vapor deposition and their thermoelectric properties are characterized from 120 K to 300 K for potential application in integrated microscale cooling.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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