Tuesday, March 31, 2015

Enhanced in-plane thermoelectric figure of merit in p-type SiGe thin films by nanograin boundaries




Nanoscale , 2015, Advance Article

DOI: 10.1039/C5NR00181A, Paper

Jianbiao Lu, Ruiqiang Guo, Weijing Dai, Baoling Huang

P-Type polycrystalline silicon-germanium thin films are grown by low-pressure chemical vapor deposition and their thermoelectric properties are characterized from 120 K to 300 K for potential application in integrated microscale cooling.

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