Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR06331G, Paper
DOI: 10.1039/C4NR06331G, Paper
Dominik Lembke, Adrien Allain, Andras Kis
The intrinsic mobility of two-dimensional (2D) semiconductors is easily masked by surface absorbates. We report here that after carful annealing, the room-temperature mobility of field-effect transistors (FETs) based on monolayer MoS2 is significantly higher than that of FETs based on two or three layers.
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The intrinsic mobility of two-dimensional (2D) semiconductors is easily masked by surface absorbates. We report here that after carful annealing, the room-temperature mobility of field-effect transistors (FETs) based on monolayer MoS2 is significantly higher than that of FETs based on two or three layers.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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