Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR07433E, Paper
DOI: 10.1039/C4NR07433E, Paper
Tong Zhou, Guglielmo Vastola, Yong-Wei Zhang, Qijun Ren, Yongliang Fan, Zhenyang Zhong
Naturally aligned in-plane (without post-growth assembly), defect-free (without a metal catalyst) and controllable GeSi nanowires are discovered via self-assembly of Ge on miscut Si (001) substrates by an angle [small theta] ([small theta] < 11[degree]) toward the [100] direction.
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Naturally aligned in-plane (without post-growth assembly), defect-free (without a metal catalyst) and controllable GeSi nanowires are discovered via self-assembly of Ge on miscut Si (001) substrates by an angle [small theta] ([small theta] < 11[degree]) toward the [100] direction.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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