Monday, April 29, 2013

Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer

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Yu-An Liao, Wei-Ting Hsu, and Shih-Han Huang et al.

We investigate the optical properties of InAs quantum dots (QDs) capped with a thin AlxGa1−xAsSb layer. As evidenced from power-dependent and time-resolved photoluminescence (PL) measurements, the GaAsSb-capped QDs with type-II band alignment can be changed to type-I by adding Al into the GaAsSb c ... [Appl. Phys. Lett. 102, 173104 (2013)] published Mon Apr 29, 2013.



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