Monday, April 29, 2013

Resonant depletion of photogenerated carriers in InGaAs/GaAs nanowire mats

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Marta De Luca, Antonio Polimeni, and Marco Felici et al.

Photoluminescence excitation spectra of InGaAs in InGaAs/GaAs heterostructure nanowire mats show clear antiresonances at the critical points of the joint density of states of the GaAs barrier. This remarkable effect arises from resonant light absorption in the upper GaAs segments, with ensuing red ... [Appl. Phys. Lett. 102, 173102 (2013)] published Mon Apr 29, 2013.



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