Monday, April 29, 2013

Spontaneous formation of InGaN nanowall network directly on Si

(author unknown)



P. E. D. Soto Rodriguez, Praveen Kumar, and V. J. Gómez et al.

We present the study on epitaxial growth of an InGaN nanowall network directly on Si by plasma-assisted molecular beam epitaxy. Scanning electron microscopy, high-resolution X-ray diffraction, and transmission electron microscopy together with energy-dispersive X-ray analysis infer the crystalline ... [Appl. Phys. Lett. 102, 173105 (2013)] published Mon Apr 29, 2013.



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