Nanoscale , 2013, Advance Article
DOI: 10.1039/C3NR01796F, Paper
DOI: 10.1039/C3NR01796F, Paper
Hoon Ryu, Sunhee Lee, Bent Weber, Suddhasatta Mahapatra, Lloyd C. L. Hollenberg, Michelle Y. Simmons, Gerhard Klimeck
Metallic conduction in atomic-scale highly P-doped Si nanowires is theoretically studied using a tight-binding approach coupled to Schrodinger-Poisson simulations. The density of states and spatial distributions of electrons confirm they remain metallic down to the atomic-scale, which bodes well for their utility as ultra-thin metallic interconnects for atomic-scale devices.
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Metallic conduction in atomic-scale highly P-doped Si nanowires is theoretically studied using a tight-binding approach coupled to Schrodinger-Poisson simulations. The density of states and spatial distributions of electrons confirm they remain metallic down to the atomic-scale, which bodes well for their utility as ultra-thin metallic interconnects for atomic-scale devices.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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