Ultra-low switching power, crystallographic analysis, and switching mechanism for SnXTe100−X/Sb2Te3 diluted superlattice system

Susumu Soeya, Toshimichi Shintani, and Takahiro Odaka et al.

Ultra-low switching power (∼1/50th–1/2250th that of a Ge2Sb2Te5 device) was obtained in a SnXTe100−X/Sb2Te3 diluted superlattice (SL) device (X = 10, 20, and 35 at. %). XRD analysis showed that there was little coexistence of the SnTe/Sb2Te3 SL, Bi2Te3-type SnSbTe-alloy and Te phases. Detailed cry ... [Appl. Phys. Lett. 103, 053103 (2013)] published Mon Jul 29, 2013.



Click for full article