One-step growth of vertical graphene sheets on carbon nanotubes and their field emission properties

Jianlong Liu, Baoqing Zeng, and Xiangru Wang et al.

Graphene-carbon nanotube hybrid is prepared by an in situ growth of vertical graphene sheets on carbon nanotubes (CNTs), using one-step plasma-enhanced chemical vapor deposition, without catalyst. TEM analysis indicates that the growth of graphene is in accordance with the defects of carbon nanotu ... [Appl. Phys. Lett. 103, 053105 (2013)] published Mon Jul 29, 2013.



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Ultra-low switching power, crystallographic analysis, and switching mechanism for SnXTe100−X/Sb2Te3 diluted superlattice system

Susumu Soeya, Toshimichi Shintani, and Takahiro Odaka et al.

Ultra-low switching power (∼1/50th–1/2250th that of a Ge2Sb2Te5 device) was obtained in a SnXTe100−X/Sb2Te3 diluted superlattice (SL) device (X = 10, 20, and 35 at. %). XRD analysis showed that there was little coexistence of the SnTe/Sb2Te3 SL, Bi2Te3-type SnSbTe-alloy and Te phases. Detailed cry ... [Appl. Phys. Lett. 103, 053103 (2013)] published Mon Jul 29, 2013.



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Band gap prediction for composition-tunable alloyed semiconductor nanocrystals

Lihua Gao and Faming Gao

Size and composition-dependences of band gap energies are important properties for nanocrystal semiconductors, and have attracted extensive attentions for the last two decades. In this letter, a simple method of band gap prediction for nanocrystal alloys is developed. The band gaps of II–VI semico ... [Appl. Phys. Lett. 103, 053101 (2013)] published Mon Jul 29, 2013.



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Non-volatile memory with self-assembled ferrocene charge trapping layer

Hao Zhu, Christina A. Hacker, and Sujitra J. Pookpanratana et al.

A metal/oxide/molecule/oxide/Si capacitor structure containing redox-active ferrocene molecules has been fabricated for non-volatile memory application. Cyclic voltammetry and X-ray photoelectron spectroscopy were used to measure the molecules in the structure, showing that the molecules attach on ... [Appl. Phys. Lett. 103, 053102 (2013)] published Mon Jul 29, 2013.



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Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor

Emiliano Bonera, Riccardo Gatti, and Giovanni Isella et al.

We studied the plastic deformation of an ultrathin silicon-on-insulator with epitaxial Si1−xGex by transmission electron microscopy, Raman spectroscopy, and finite-element method. We analyzed a top Si layer of 10 nm (testing also a 2 nm layer) with epitaxial Si0.64Ge0.36 stressors of 50 and 100 nm ... [Appl. Phys. Lett. 103, 053104 (2013)] published Mon Jul 29, 2013.



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