Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor

Emiliano Bonera, Riccardo Gatti, and Giovanni Isella et al.

We studied the plastic deformation of an ultrathin silicon-on-insulator with epitaxial Si1−xGex by transmission electron microscopy, Raman spectroscopy, and finite-element method. We analyzed a top Si layer of 10 nm (testing also a 2 nm layer) with epitaxial Si0.64Ge0.36 stressors of 50 and 100 nm ... [Appl. Phys. Lett. 103, 053104 (2013)] published Mon Jul 29, 2013.



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