In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

Emmanouil Dimakis, Manfred Ramsteiner, and Chang-Ning Huang et al.

Growth and structural aspects of the in situ doping of InAs nanowires with Si have been investigated. The nanowires were grown catalyst-free on Si(111) substrates by molecular beam epitaxy. The supply of Si influenced the growth kinetics, affecting the nanowire dimensions, but not the degree of st ... [Appl. Phys. Lett. 103, 143121 (2013)] published Thu Oct 03, 2013.



Click for full article