Thursday, May 29, 2014

2D XANES-XEOL mapping: observation of enhanced band gap emission from ZnO nanowire arrays




Nanoscale , 2014, 6,6531-6536

DOI: 10.1039/C4NR01049C, Communication

Zhiqiang Wang, Xiaoxuan Guo, Tsun-Kong Sham

Using two-dimensional X-ray absorption near-edge structure-X-ray excited optical luminescence (2D XANES-XEOL) spectroscopy, it is found that the band gap emission of ZnO nanowire arrays is substantially enhanced i.e. that the intensity ratio between the band gap and defect emissions increases by more than an order of magnitude when the excitation energy is scanned across the O K-edge. Possible mechanisms are discussed.

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