Friday, October 03, 2014

Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

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The Journal of Physical Chemistry C

DOI: 10.1021/jp5071264




Lorenzo Mancini, Nooshin Amirifar, Deodatta Shinde, Ivan Blum, Matthieu Gilbert, Angela Vella, François Vurpillot, Williams Lefebvre, Rodrigue Lardé, Etienne Talbot, Philippe Pareige, Xavier Portier, Ahmed Ziani, Christian Davesnne, Christophe Durand, Joël Eymery, Raphaël Butté, Jean-François Carlin, Nicolas Grandjean and Lorenzo Rigutti

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