Optically transparent thin-film transistors based on 2D multilayer MoS 2 and indium zinc oxide electrodes

We report on optically transparent thin film transistors (TFTs) fabricated using multilayered molybdenum disulfide (MoS 2 ) as the active channel, indium tin oxide (ITO) for the back-gated electrode and indium zinc oxide (IZO) for the source/drain electrodes, respectively, which showed more than 81% transmittance in the visible wavelength. In spite of a relatively large Schottky barrier between MoS 2 and IZO, the n -type behavior with a field-effect mobility ( μ eff ) of 1.4 cm 2 V −1 s −1 was observed in as-fabricated transparent MoS 2 TFT. In order to enhance the performances of transparent MoS 2 TFTs, a picosecond pulsed laser was selectively irradiated onto the contact region of the IZO electrodes. Following laser annealing, μ eff increased to 4.5 cm 2 V −1 s −1 , and the on-off current ratio ( I on / I off ) inc...

Junyeon Kwon, Young Ki Hong, Hyuk-Jun Kwon, Yu Jin Park, Byungwook Yoo, Jiwan Kim, Costas P Grigoropoulos, Min Suk Oh and Sunkook Kim

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