Tuesday, December 30, 2014

Stable self-compliance resistive switching in AlO δ /Ta 2 O 5− x /TaO y triple layer devices

Stable self-compliance property was observed in the AlO δ /Ta 2 O 5− x /TaO y triple-layer resistive random access memory structure. The impact of AlO δ barrier layer was studied with different thicknesses. Endurance of more than 10 10 cycles and data retention for more than 3 h at 125 °C were demonstrated. All the measurements were carried out without external current compliance and no hard breakdown was observed. Systematic analysis reveals the self-compliance property is due to the built-in series resistance of the thin AlO δ barrier layer. A model is proposed to explain this self-compliance property.

Huaqiang Wu, Xinyi Li, Feiyang Huang, An Chen, Zhiping Yu and He Qian

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