Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR05223H, Communication
DOI: 10.1039/C5NR05223H, Communication
Min Ji Park, Sum-Gyun Yi, Joo Hyung Kim, Kyung-Hwa Yoo
The temperature dependence of electrical transport properties was investigated for multilayer MoS2 field effect transistor devices with thicknesses of 3 ~ 22 nm. Some devices showed typical n-type semiconducting behavior,...
The content of this RSS Feed (c) The Royal Society of Chemistry
The temperature dependence of electrical transport properties was investigated for multilayer MoS2 field effect transistor devices with thicknesses of 3 ~ 22 nm. Some devices showed typical n-type semiconducting behavior,...
The content of this RSS Feed (c) The Royal Society of Chemistry
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