Thursday, August 27, 2015

Metal-Insulator Transition in Multilayer MoS2

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR05223H, Communication
Min Ji Park, Sum-Gyun Yi, Joo Hyung Kim, Kyung-Hwa Yoo
The temperature dependence of electrical transport properties was investigated for multilayer MoS2 field effect transistor devices with thicknesses of 3 ~ 22 nm. Some devices showed typical n-type semiconducting behavior,...
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