Friday, September 11, 2015

A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR04961J, Paper
Xiang-Xiang Song, Di Liu, Vahid Mosallanejad, Jie You, Tian-Yi Han, Dian-Teng Chen, Hai-ou Li, Gang Cao, Ming Xiao, Guang-Can Guo, Guoping Guo
Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin...
The content of this RSS Feed (c) The Royal Society of Chemistry


Click for full article

No comments:

Post a Comment