Wednesday, September 09, 2015

A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy

Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR04592D, Paper
Ya Yi, Changming Wu, Hongchao Liu, Jiali Zeng, Hongtao He, Jiannong Wang
A scanning photocurrent microscopy method is applied to study the lateral expansion of depletion regions at the metal/2D TMDC Schottky contacts with different gate and drain biases.
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