Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR03314D, Paper
DOI: 10.1039/C5NR03314D, Paper
E. Yalon, I. Karpov, V. Karpov, I. Riess, D. Kalaev, D. Ritter
The insulating gap and conductive filament growth direction in valence change RRAM devices were studied using the metal-insulator-semiconductor bipolar transistor structure.
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The insulating gap and conductive filament growth direction in valence change RRAM devices were studied using the metal-insulator-semiconductor bipolar transistor structure.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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