Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR04239A, Communication
DOI: 10.1039/C5NR04239A, Communication
Ah Hyun Park, Tae Hoon Seo, S. Chandramohan, Gun Hee Lee, Kyung Hyun Min, Seula Lee, Myung Jong Kim, Yong Gyoo Hwang, Eun-Kyung Suh
A facile method for the epitaxial lateral overgrowth of high-quality gallium nitride was developed by using single-walled carbon nanotubes.
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A facile method for the epitaxial lateral overgrowth of high-quality gallium nitride was developed by using single-walled carbon nanotubes.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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