Wednesday, September 09, 2015

Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes

Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR04239A, Communication
Ah Hyun Park, Tae Hoon Seo, S. Chandramohan, Gun Hee Lee, Kyung Hyun Min, Seula Lee, Myung Jong Kim, Yong Gyoo Hwang, Eun-Kyung Suh
A facile method for the epitaxial lateral overgrowth of high-quality gallium nitride was developed by using single-walled carbon nanotubes.
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