High Speed, High Temperature Electrical Characterization of Phase Change Materials: Metastable Phases, Crystallization Dynamics, and Resistance Drift

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR05512A, Communication

Faruk Dirisaglik, Gokhan Bakan, Zoila Jurado, Sadid Muneer, Mustafa Akbulut, Jonathan Rarey, Lindsay Sullivan, Maren Wennberg, Adrienne King, Lingyi Zhang, Rebecca Nowak, Chung Lam, Helena Silva, Ali Gokirmak
During the fast switching in Ge₂Sb₂Te₅ phase change memory devices, both the amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal transition temperatures respectively. In this work,...
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