Wednesday, September 09, 2015

Sulfur vacancy activated field effect transistors based on ReS2 nanosheets

Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR04625D, Paper
Kai Xu, Hui-Xiong Deng, Zhenxing Wang, Yun Huang, Feng Wang, Shu-Shen Li, Jun-Wei Luo, Jun He
We successfully synthesized ReS2 NSs and found that sulfur vacancies existing in ReS2 NSs significantly affect the performance of the devices.
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