Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR04821D, Paper
DOI: 10.1039/C5NR04821D, Paper
Gozde Tutuncuoglu, Maria de la Mata, Davide Deiana, Heidi Potts, Federico Matteini, Jordi Arbiol, Anna Fontcuberta i Morral
We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As4 re-emission and shadowing in the growth rate of...
The content of this RSS Feed (c) The Royal Society of Chemistry
We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As4 re-emission and shadowing in the growth rate of...
The content of this RSS Feed (c) The Royal Society of Chemistry
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