Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR04771D, Paper
DOI: 10.1039/C5NR04771D, Paper
Bing Yang, Baodan Liu, Yujia Wang, Hao Zhuang, Qingyun Liu, Fang Yuan, Xin Jiang
Type II stacking faults are formed in GaN nanowires at high doping level rather than under no doping.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Type II stacking faults are formed in GaN nanowires at high doping level rather than under no doping.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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