Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR04982B, Communication
DOI: 10.1039/C5NR04982B, Communication
Mark Buckwell, Luca Montesi, Stephen Hudziak, Adnan Mehonic, Anthony J. Kenyon
Conductive atomic force microscopy was used to etch through SiOx resistance switching devices to produce three-dimensional renderings of conductive filaments.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Conductive atomic force microscopy was used to etch through SiOx resistance switching devices to produce three-dimensional renderings of conductive filaments.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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