Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR03608A, Paper
DOI: 10.1039/C5NR03608A, Paper
Sebastian Heedt, Isabel Otto, Kamil Sladek, Hilde Hardtdegen, Jurgen Schubert, Natalia Demarina, Hans Luth, Detlev Grutzmacher, Thomas Schapers
The profound impact of InAs nanowire surface states on transistor functionality is quantified using a novel dual-gate FET evaluation method in conjunction with finite element method simulations of nanowire electrostatics.
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The profound impact of InAs nanowire surface states on transistor functionality is quantified using a novel dual-gate FET evaluation method in conjunction with finite element method simulations of nanowire electrostatics.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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