Preparing non-volatile resistive switching memories by tuning the content of Au@air@TiO2-h yolk-shell microspheres in a poly(3-hexylthiophene) layer

Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR05835J, Paper

Peng Wang, Quan Liu, Chun-Yu Zhang, Jun Jiang, Li-Hua Wang, Dong-Yun Chen, Qing-Feng Xu, Jian-Mei Lu
Organic/inorganic hybrid (Au@air@TiO₂-h/P3HT) memory devices showed variable memory performance when tuning the microspheres content.
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