Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR05988G, Paper
DOI: 10.1039/C5NR05988G, Paper
Rajesh Kumar Ulaganathan, Yi-Ying Lu, Chia-Jung Kuo, Srinivasa Reddy Tamalampudi, Raman Sankar, Karunakara Moorthy Boopathi, Ankur Anand, Kanchan Yadav, Roshan Jesus Mathew, Chia-Rung Liu, Fang-Cheng Chou, Yit-Tsong Chen
In this paper, we report the optoelectronic properties of multi-layered GeS nanosheets (~28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of R[small lambda] ~ 206...
The content of this RSS Feed (c) The Royal Society of Chemistry
In this paper, we report the optoelectronic properties of multi-layered GeS nanosheets (~28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of R[small lambda] ~ 206...
The content of this RSS Feed (c) The Royal Society of Chemistry
Click for full article
No comments:
Post a Comment