Nanoscale, 2016, Advance Article
DOI: 10.1039/C5NR06345K, Communication
DOI: 10.1039/C5NR06345K, Communication
S. J. Zhang, S. S. Lin, X. Q. Li, X. Y. Liu, H. A. Wu, W. L. Xu, P. Wang, Z. Q. Wu, H. K. Zhong, Z. J. Xu
The band gap of graphene opened by Si-doping is 0.28 eV, which results in the improved performance of graphene/GaAs solar cells.
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The band gap of graphene opened by Si-doping is 0.28 eV, which results in the improved performance of graphene/GaAs solar cells.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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