Nanoscale, 2016, 8,226-232
DOI: 10.1039/C5NR06345K, Communication
DOI: 10.1039/C5NR06345K, Communication
S. J. Zhang, S. S. Lin, X. Q. Li, X. Y. Liu, H. A. Wu, W. L. Xu, P. Wang, Z. Q. Wu, H. K. Zhong, Z. J. Xu
The band gap of graphene opened by Si-doping is 0.28 eV, which results in the improved performance of graphene/GaAs solar cells.
The content of this RSS Feed (c) The Royal Society of Chemistry
The band gap of graphene opened by Si-doping is 0.28 eV, which results in the improved performance of graphene/GaAs solar cells.
The content of this RSS Feed (c) The Royal Society of Chemistry
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