Thursday, December 27, 2012

Effects of Be doping on InP nanowire growth mechanisms

(author unknown)



R. J. Yee, S. J. Gibson, and V. G. Dubrovskii et al.

Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration below ... [Appl. Phys. Lett. 101, 263106 (2012)] published Thu Dec 27, 2012.



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