Tuesday, January 22, 2013

Inversion domain boundaries on tin (Sn)-doped ZnO nanobelts: Aberration-corrected scanning transmission electron microscopy study

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Yun Chang Park, Young Heon Kim, and Ho-Hyun Nahm et al.

An inversion domain boundary (IDB) related to an interstitial stacking layer (ISL) was observed on the {0002} planes of the wurtzite (WZ) structure of tin (Sn)-doped ZnO nanobelts. Quantitative STEM analysis confirmed that the ISL was composed of Sn element. Oxygen related to the ISL was in a tria ... [Appl. Phys. Lett. 102, 033103 (2013)] published Tue Jan 22, 2013.



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