Xiang-Lei Han
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, 2013, Accepted Manuscript
DOI: 10.1039/C3NR33738C, Paper
DOI: 10.1039/C3NR33738C, Paper
Guilhem Larrieu, Xiang-Lei Han
Nanowire-based field-effect transistors are among the most promising means of overcoming the limits of today's planar silicon electronic devices, in part because of their suitability for gate-all-around architectures, which provide...
The content of this RSS Feed (c) The Royal Society of Chemistry
Nanowire-based field-effect transistors are among the most promising means of overcoming the limits of today's planar silicon electronic devices, in part because of their suitability for gate-all-around architectures, which provide...
The content of this RSS Feed (c) The Royal Society of Chemistry
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