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Jing Zhao, Wuxia Li, and Chengchun Tang et al.
The transport properties of F-doped boron nitride nanotube (BNNT) top-gate field effect devices were investigated to demonstrate the realization of p-type BNNTs by F-doping. The drain current was found to increase substantially with the applied negative gate voltage, suggesting these devices persi ... [Appl. Phys. Lett. 102, 153107 (2013)] published Fri Apr 19, 2013.
Link to full article
Jing Zhao, Wuxia Li, and Chengchun Tang et al.
The transport properties of F-doped boron nitride nanotube (BNNT) top-gate field effect devices were investigated to demonstrate the realization of p-type BNNTs by F-doping. The drain current was found to increase substantially with the applied negative gate voltage, suggesting these devices persi ... [Appl. Phys. Lett. 102, 153107 (2013)] published Fri Apr 19, 2013.
Link to full article
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