In situ control of oxygen vacancies in TiO 2 by atomic layer deposition for resistive switching devices

Oxygen vacancies (V O ) have profound effects on the physical and chemical performance of devices based on oxide materials. This is particularly true in the case of oxide-based resistive random access memories, in which memory switching operation under an external electrical stimulus is closely associated with the migration and ordering of the oxygen vacancies in the oxide material. In this paper, we report on a reliable approach to in situ control of the oxygen vacancies in TiO x films. Our strategy for tight control of the oxygen vacancy is based on the utilization of plasma-enhanced atomic layer deposition of titanium oxide under precisely regulated decomposition of the precursor molecules (titanium (IV) tetraisopropoxide, Ti[OCH(CH 3 ) 2 ] 4 ) by plasma-activated reactant mixture (N 2 +O 2 ). From the various spectroscopic and microstructural analyses by using Rutherford backscattering spectrometry,...

Sang-Joon Park, Jeong-Pyo Lee, Jong Shik Jang, Hyun Rhu, Hyunung Yu, Byung Youn You, Chang Soo Kim, Kyung Joong Kim, Yong Jai Cho, Sunggi Baik and Woo Lee

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