Wednesday, June 05, 2013

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

(author unknown)



Chloé Rolland, Philippe Caroff, and Christophe Coinon et al.

We have investigated in situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density alo ... [Appl. Phys. Lett. 102, 223105 (2013)] published Wed Jun 05, 2013.



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