Nanoscale , 2013, Advance Article
DOI: 10.1039/C3NR01462B, Paper
DOI: 10.1039/C3NR01462B, Paper
Zheng Li, Jiaxin Zheng, Zeyuan Ni, Ruge Quhe, Yangyang Wang, Zhengxiang Gao, Jing Lu
Heavily doped SWCNT p-i-n junctions evolve from positive rectifying diodes to Esaki diodes by increasing the intrinsic region length.
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Heavily doped SWCNT p-i-n junctions evolve from positive rectifying diodes to Esaki diodes by increasing the intrinsic region length.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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