Thursday, June 20, 2013

Low-Voltage Back-Gated Atmospheric Pressure Chemical Vapor Deposition Based Graphene-Striped Channel Transistor with High-κ Dielectric Showing Room-Temperature Mobility > 11 000 cm2/V·s

TOC Graphic


ACS Nano

DOI: 10.1021/nn400796b




Casey Smith, Ramy Qaisi, Zhihong Liu, Qingkai Yu and Muhammad Mustafa Hussain

Click for full article
Posted by at
Labels: ,

No comments:

Post a Comment

Subscribe to: Post Comments (Atom)