Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

Taekyung Lim, Dongchool Kim, and Sanghyun Ju

Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al2O3) on a graphene channel through nitrogen pl ... [Appl. Phys. Lett. 103, 013107 (2013)] published Tue Jul 02, 2013.



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