Excelling under strain: band engineering in nanomaterials

A little stress or strain has been known to improve the performance of athletes, actors and of course nanomaterials alike. In fact strain in silicon is now a major engineering tool for improving the performance of devices, and is ubiquitously used in device design and fabrication. Strain engineering alters a material's band structure, a model of electron behaviour that describes how as atoms come together in a solid, their discrete electron orbitals overlap to ultimately give rise to bands of allowed energy levels. In a strained crystal lattice of silicon or silicon germanium the distance between atoms in the lattice is greater than usual and the bands of allowed energy levels change. This July marks 100 years since Bohr submitted his paper 'On the constitution of atoms and molecules' [1] where he describes the structure of the atom in terms of discrete allowed energy levels. The paper was a seminal contribution to the development of quantum mechanics and laid the initial theore...

Anna Demming

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