Quenching of the E2 phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast

M. Ramsteiner, O. Brandt, and P. Kusch et al.

We investigate the Raman intensity of E2H phonons in wurtzite GaAs nanowire ensembles as well as single nanowires as a function of excitation wavelength. For nanowires with radii in the range of 25 nm, an almost complete quenching of the E2H phonon line is observed for excitation wavelengths large ... [Appl. Phys. Lett. 103, 043121 (2013)] published Fri Jul 26, 2013.



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