Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire

Ko-Hui Lee, Jung-Ruey Tsai, and Ruey-Dar Chang et al.

A gate-all-around polycrystalline silicon nanowire (NW) floating-gate (FG) memory device was fabricated and characterized in this work. The cross-section of the NW channels was intentionally made to be triangular in shape in order to study the effects of the corners on the device operation. Our re ... [Appl. Phys. Lett. 103, 153102 (2013)] published Thu Oct 10, 2013.



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