Field effect transistors with layered two-dimensional SnS2−xSex conduction channels: Effects of selenium substitution

T. S. Pan, D. De, and J. Manongdo et al.

A thorough characterization of field effect transistors with conduction channels made of SnS2−xSex nanocrystals having different selenium content is presented. The main effect of increasing the selenium content is a suppression of the drain-source current modulation by the gate voltage. The temper ... [Appl. Phys. Lett. 103, 093108 (2013)] published Wed Aug 28, 2013.



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