Al-doped GeTe is proposed for high-temperature phase-change memories (PCM). The bonding and coordination environment of Al atoms in Al2.7Ge50Te50 is studied by X-ray photoelectron spectroscopy and nuclear magnetic resonance. The large number of bonds provided by Al improves the stability of the am ... [Appl. Phys. Lett. 103, 093111 (2013)] published Fri Aug 30, 2013.
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