Nanoscale , 2013, Advance Article
DOI: 10.1039/C3NR01899G, Paper
DOI: 10.1039/C3NR01899G, Paper
H. S. Song, S. L. Li, L. Gao, Y. Xu, K. Ueno, J. Tang, Y. B. Cheng, K. Tsukagoshi
High-performance top-gated FETs and related logic gates from monolayer SnS2 , a two-dimensional non-transition metal dichalcogenide, have been demonstrated.
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High-performance top-gated FETs and related logic gates from monolayer SnS2 , a two-dimensional non-transition metal dichalcogenide, have been demonstrated.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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