Thursday, August 29, 2013

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits




Nanoscale , 2013, Advance Article

DOI: 10.1039/C3NR01899G, Paper

H. S. Song, S. L. Li, L. Gao, Y. Xu, K. Ueno, J. Tang, Y. B. Cheng, K. Tsukagoshi

High-performance top-gated FETs and related logic gates from monolayer SnS2 , a two-dimensional non-transition metal dichalcogenide, have been demonstrated.

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