Nanoscale , 2013, Advance Article
DOI: 10.1039/C3NR02754F, Paper
DOI: 10.1039/C3NR02754F, Paper
Alberto Eljarrat, Lluis Lopez-Conesa, Jose Manuel Rebled, Yonder Berencen, Joan Manel Ramirez, Blas Garrido, Cesar Magen, Sonia Estrade, Francesca Peiro
High resolution scanning transmission electron microscopy with an aberration corrected and monochromated instrument has been used for the assessment of the silicon-based active layer stack for novel optoelectronic devices.
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High resolution scanning transmission electron microscopy with an aberration corrected and monochromated instrument has been used for the assessment of the silicon-based active layer stack for novel optoelectronic devices.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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