Friday, August 30, 2013

Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS




Nanoscale , 2013, Advance Article

DOI: 10.1039/C3NR02754F, Paper

Alberto Eljarrat, Lluis Lopez-Conesa, Jose Manuel Rebled, Yonder Berencen, Joan Manel Ramirez, Blas Garrido, Cesar Magen, Sonia Estrade, Francesca Peiro

High resolution scanning transmission electron microscopy with an aberration corrected and monochromated instrument has been used for the assessment of the silicon-based active layer stack for novel optoelectronic devices.

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