Nanochemistry: Charge Trapping States at the SiO2–Oligothiophene Monolayer Interface in Field Effect Transistors Studied by Kelvin Probe Force Microscopy

Thursday, August 29, 2013

Charge Trapping States at the SiO2–Oligothiophene Monolayer Interface in Field Effect Transistors Studied by Kelvin Probe Force Microscopy

TOC Graphic

ACS Nano

DOI: 10.1021/nn403750h

Yingjie Zhang, Dominik Ziegler and Miquel Salmeron

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