Thursday, August 29, 2013

Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates




Nanoscale , 2013, Advance Article

DOI: 10.1039/C3NR03220E, Communication

Mei Yin Chan, Katsuyoshi Komatsu, Song-Lin Li, Yong Xu, Peter Darmawan, Hiromi Kuramochi, Shu Nakaharai, Alex Aparecido-Ferreira, Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi

The carrier mobility of the atomically thin MoS2 field-effect transistors shows a suppression of thermally activated transport on h-BN substrates.

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