Nanoscale , 2013, Advance Article
DOI: 10.1039/C3NR03220E, Communication
DOI: 10.1039/C3NR03220E, Communication
Mei Yin Chan, Katsuyoshi Komatsu, Song-Lin Li, Yong Xu, Peter Darmawan, Hiromi Kuramochi, Shu Nakaharai, Alex Aparecido-Ferreira, Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi
The carrier mobility of the atomically thin MoS2 field-effect transistors shows a suppression of thermally activated transport on h-BN substrates.
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The carrier mobility of the atomically thin MoS2 field-effect transistors shows a suppression of thermally activated transport on h-BN substrates.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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